november 2013 fqd10n20c / fqu10n20c ? n-channel qfet ? mosfet ?2003 fairchild semiconductor corporation fqd10n20c / fqu10n20c rev. c2 www.fairchildsemi.com 1 absolute maximum ratings t c = 25c unless otherwise noted. thermal characteristics symbol parameter fqd10n20ctm / FQU10N20CTU unit v dss drain-source voltage 200 v i d drain current - continuous (t c = 25c) 7.8 a - continuous (t c = 100c) 5.0 a i dm drain current - pulsed (note 1) 31.2 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 210 mj i ar avalanche current (note 1) 7.8 a e ar repetitive avalanche energy (note 1) 5.0 mj dv/dt peak diode recovery dv/dt (note 3) 5.5 v/ns p d power dissipation (t c = 25c) 50 w - derate above 25c 0.4 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter fqd10n20ctm / FQU10N20CTU unit r jc thermal resistance, junction-to-case, max. 2.5 c / w r ja thermal resistance, junction-to-ambient, max. 110 fqd10n20c / fqu10n20c n-channel qfet ? mosfet 200 v, 7.8 a, 360 m ? features ? 7.8 a, 200 v, r ds(on) = 360 m ? (max.) @ v gs = 10 v, i d = 3.9 a ? low gate charge (typ. 20 nc) ? low crss (typ. 40.5 pf) ? 100% avalanche tested description this n-channel enhancement mode power mosfet is produced using fairchild semiconductor?s proprietary planar stripe and dmos te chnology. this advanced mosfet technology has been es pecially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. these devices are suitable for switched mode power supplies, active power factor correction (pfc), and electronic lamp ballasts. g d s i-pak d-pak g s d g s d
fqd10n20c / fqu10n20c ? n-channel qfet ? mosfet ?2003 fairchild semiconductor corporation fqd10n20c / fqu10n20c rev. c2 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25c unless otherwise noted. notes: 1. repetitive rating : pulse width li mited by maximum junction temperature. 2. l = 5.2 mh, i as = 7.8 a, v dd = 50 v, r g = 25 , starting t j = 25c. 3. i sd 9.5 a, di/dt 300 a/ s, v dd bv dss, starting t j = 25c. 4. essentially independent of operating temperature. device marking device package reel size tape width quantity fqd10n20c fqd10n20ctm d-pak 330 mm 16 mm 2500 units fqu10n20c FQU10N20CTU i-pak tube n/a 70 units symbol parameter test conditions min typ max unit off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 200 -- -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.28 -- v/c i dss zero gate voltage drain current v ds = 200 v, v gs = 0 v -- -- 10 a v ds = 160 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 3.9 a -- 0.29 0.36 g fs forward transconductance v ds = 40 v, i d = 3.9 a -- 5.6 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 395 510 pf c oss output capacitance -- 97 125 pf c rss reverse transfer capacitance -- 40.5 53 pf switching characteristics t d(on) turn-on delay time v dd = 100 v, i d = 9.5 a, r g = 25 (note 4) -- 11 30 ns t r turn-on rise time -- 92 190 ns t d(off) turn-off delay time -- 70 150 ns t f turn-off fall time -- 72 160 ns q g total gate charge v ds = 160 v, i d = 9.5 a, v gs = 10 v (note 4) -- 20 26 nc q gs gate-source charge -- 3.1 -- nc q gd gate-drain charge -- 10.5 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 7.8 a i sm maximum pulsed drain-source diode forward current -- -- 31.2 a v sd drain-source diode forward voltage v gs = 0 v, i s = 7.8 a -- -- 1.5 v t rr reverse recovery time v gs = 0 v, i s = 9.5 a, di f / dt = 100 a/ s -- 158 -- ns q rr reverse recovery charge -- 0.97 -- c
fqd10n20c / fqu10n20c ? n-channel qfet ? mosfet ?2003 fairchild semiconductor corporation fqd10n20c / fqu10n20c rev. c2 www.fairchildsemi.com 3 10 -1 10 0 10 1 0 200 400 600 800 1000 1200 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 0 4 8 12162024 0 2 4 6 8 10 12 v ds = 100v v ds = 40v v ds = 160v note : i d = 9.5a v gs , gate-source voltage [v] q g , total gate charge [nc] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 10 1 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 5 10 15 20 25 30 0.0 0.5 1.0 1.5 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 246810 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] typical characteristics figure 5. capacitance characteristics fi gure 6. gate charge characteristics figure 3. on-resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics
fqd10n20c / fqu10n20c ? n-channel qfet ? mosfet ?2003 fairchild semiconductor corporation fqd10n20c / fqu10n20c rev. c2 www.fairchildsemi.com 4 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 ms 100 s dc 1 ms operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n ote s : 1. z jc (t) = 2.5 /w max. 2. d uty f acto r, d = t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] 25 50 75 100 125 150 0 2 4 6 8 10 i d , drain current [a] t c , case temperature [ ] t 1 p dm t 2 -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 3.9 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] typical characteristics (continued) figure 9. maximum safe operating area figure 10. maximum drain current vs case temperature figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature z jc (t), thermal response [ o c/w]
fqd10n20c / fqu10n20c ? n-channel qfet ? mosfet ?2003 fairchild semiconductor corporation fqd10n20c / fqu10n20c rev. c2 www.fairchildsemi.com 5 figure 12. gate charge test circuit & waveform figure 13. resistive switching test circuit & waveforms figure 14. unclamped inductive switching test circuit & waveforms v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut i g = const. e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p v gs v gs
fqd10n20c / fqu10n20c ? n-channel qfet ? mosfet ?2003 fairchild semiconductor corporation fqd10n20c / fqu10n20c rev. c2 www.fairchildsemi.com 6 figure 15. peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
fqd10n20c / fqu10n20c ? n-channel qfet ? mosfet ?2003 fairchild semiconductor corporation fqd10n20c / fqu10n20c rev. c2 www.fairchildsemi.com 7 mechanical dimensions dimension in millimeters to-252 3l (dpak) figure 16. to252 (d-pak), molded, 3 lead, option aa&ab package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_tt252-003
fqd10n20c / fqu10n20c ? n-channel qfet ? mosfet ?2003 fairchild semiconductor corporation fqd10n20c / fqu10n20c rev. c2 www.fairchildsemi.com 8 mechanical dimensions dimension in millimeters to-251 3l (ipak) figure 17. to251 (ipak) molded 3 lead package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the draw ing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packag ing area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails.html?id=pn_to251-003
fqd10n20c / fqu10n20c ? n-channel qfet ? mosfet ?2003 fairchild semiconductor corporation fqd10n20c / fqu10n20c rev. c2 www.fairchildsemi.com 9 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or desi gn. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditio ns, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support de vices or systems without the express written approval of fai rchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms accupower? 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